1 Physics, École Supérieure des Sciences de l'Aliment et des Industries Agroalimentaires, Algeria, Alger Avenue Ahmed Hamidouche, Route de Beaulieu, El Harrach Algiers, Algiers, El Harrach, 16004, ALGERIA.
2 Physics Department, Concordia University, 1455 Maisonneuve Boulevard West, Montreal, Quebec H3G 1M8, Montreal, Quebec, H4N 2Y7, CANADA.

We investigate spin transport through graphene-like substrates stubbed vertically with transition-metal-dichalkogenides (TMDs). A tight-binding model is used based on a graphene-like Hamiltonian that includes di?erent types of spin-orbit coupling (SOC) terms permitted by the C3v symmetry group in TMDs/graphene-like heterostructures. The results show a spin modulation obtained by tuning the strength and sign of the Fermi energy EF and not by varying the SOC strength as is mainly the case of Datta and Das. The spin conductance is directly controlled by the value of EF . In addition, a perfect electron-spin modulation is obtained when a vertical strain is introduced. In this case, the spin conductance exhibits a strong energy dependence. The results may open the route to a combination of graphene-like substrates with TMD stubs and the development of spin-transistor devices controlled by the Fermi energy rather than the SOC strength.